A UK-funded research project
We aim to develop advanced fabrication processes for Gallium Nitride (GaN) and related materials (AlN and InN) for the 21st Century manufacturing industries.
The III-Nitrides are functional materials that underpin the emerging global solid state lighting and power electronics industries. But their properties enable far wider applications: sensing by photonic, electronic and piezoelectric effects and in non-linear optics. Many applications of these functions are enhanced, even enabled by creating three dimensional nanostructures.
Therefore we aim to develop nanostructuring processes on a manufacturing scale to unlock the potential of these properties of the III-Nitride semiconductors in a range of innovative materials and devices.
featuring nanoimprint lithography and displacement Talbot lithography for sub-micron patterning
via Metal Organic Vapour Phase Epitaxy (MOVPE)
via high-resolution electron-beam-based characterisation techniques
of nanophotonic devices and design centering
Lecturer in Electronic Engineering
Professor of Advanced Optoelectronics
Professor of Physics
Professor of Applied Electromagnetics and Photonics
Reader in Electronic Engineering
Carol Trager Cowan