A UK-funded research project
We aim to develop advanced fabrication processes for Gallium Nitride (GaN) and related materials (AlN and InN) for the 21st Century manufacturing industries.
The III-Nitrides are functional materials that underpin the emerging global solid state lighting and power electronics industries. But their properties enable far wider applications: sensing by photonic, electronic and piezoelectric effects and in non-linear optics. Many applications of these functions are enhanced, even enabled by creating three dimensional nanostructures.
Therefore we aim to develop nanostructuring processes on a manufacturing scale to unlock the potential of these properties of the III-Nitride semiconductors in a range of innovative materials and devices.
featuring nanoimprint lithography and displacement Talbot lithography for sub-micron patterning
via Metal Organic Vapour Phase Epitaxy (MOVPE)
via high-resolution electron-beam-based characterisation techniques
of nanophotonic devices and design centering
Lecturer in Electronic Engineering
Professor of Advanced Optoelectronics
Professor of Physics
Professor of Applied Electromagnetics and Photonics
Reader in Electronic Engineering